IndiumV3, Chine, Analysis, bibRecord, 000830

High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

Identifieur interne : 000830 ( Chine/Analysis ); précédent : 000829; suivant : 000831

High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

Auteurs : RBID : Pascal:11-0297843

Descripteurs français

Pascal (Inist)
- Réflexion Bragg, Réflexion Bragg répartie, Etude expérimentale, Méthode MOCVD, Facteur réflexion, Rugosité, Composé binaire, Semiconducteur III-V, Gallium Nitrure, Aluminium Nitrure, Substrat saphir, Ga N, AlN, GaN, Réflecteur Bragg, 4279F.

English descriptors

KwdEn :
- Aluminium Nitrides, Binary compounds, Bragg reflection, Distributed Bragg reflection, Experimental study, Gallium Nitrides, III-V semiconductors, MOCVD, Reflectivity, Roughness.

Abstract

High-reflectivity AlN/GaN distributed Bragg reflectors (DBRs) were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). A low temperature (LT) predeposition AIN layer and indium doping during the growth of the λ/4 AlN layers were adopted to improve the quality of the DBR. During the growth of the DBR, the structural alternation occurred abruptly when an AIN layer was grown on a GaN layer but gradually in reverse order, which resulted in a stack of quasi-three-layer periodic arrangement rather than two-layer arrangement for one growth period. The peak reflectivity of DBRs reaches 99% at the designed wavelength. The root mean square (RMS) roughness of the surface is around 4 nm over a 10 μm x 10 μm surface area of the DBR. Meanwhile, the high-reflectivity (93%) and crack-free DBR with only 16-period AlN/GaN structures was obtained by employing an optimized AlN predeposition layer.

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Le document en format XML

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<author><name sortKey="Wu, C M" uniqKey="Wu C">C. M. Wu</name>
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<term>Bragg reflection</term>
<term>Distributed Bragg reflection</term>
<term>Experimental study</term>
<term>Gallium Nitrides</term>
<term>III-V semiconductors</term>
<term>MOCVD</term>
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<term>Roughness</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Réflexion Bragg</term>
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<term>Semiconducteur III-V</term>
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<front><div type="abstract" xml:lang="en">High-reflectivity AlN/GaN distributed Bragg reflectors (DBRs) were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). A low temperature (LT) predeposition AIN layer and indium doping during the growth of the λ/4 AlN layers were adopted to improve the quality of the DBR. During the growth of the DBR, the structural alternation occurred abruptly when an AIN layer was grown on a GaN layer but gradually in reverse order, which resulted in a stack of quasi-three-layer periodic arrangement rather than two-layer arrangement for one growth period. The peak reflectivity of DBRs reaches 99% at the designed wavelength. The root mean square (RMS) roughness of the surface is around 4 nm over a 10 μm x 10 μm surface area of the DBR. Meanwhile, the high-reflectivity (93%) and crack-free DBR with only 16-period AlN/GaN structures was obtained by employing an optimized AlN predeposition layer.</div>
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<fC01 i1="01" l="ENG"><s0>High-reflectivity AlN/GaN distributed Bragg reflectors (DBRs) were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). A low temperature (LT) predeposition AIN layer and indium doping during the growth of the λ/4 AlN layers were adopted to improve the quality of the DBR. During the growth of the DBR, the structural alternation occurred abruptly when an AIN layer was grown on a GaN layer but gradually in reverse order, which resulted in a stack of quasi-three-layer periodic arrangement rather than two-layer arrangement for one growth period. The peak reflectivity of DBRs reaches 99% at the designed wavelength. The root mean square (RMS) roughness of the surface is around 4 nm over a 10 μm x 10 μm surface area of the DBR. Meanwhile, the high-reflectivity (93%) and crack-free DBR with only 16-period AlN/GaN structures was obtained by employing an optimized AlN predeposition layer.</s0>
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<s5>62</s5>
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<s5>86</s5>
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High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD

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Abstract

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